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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. august 2014 docid026776 rev 1 1/18 stf6n65m2, STP6N65M2, stu6n65m2 n-channel 650 v, 1.2 ? typ., 4 a mdmesh? m2 power mosfets in to-220fp, to-220 and ipak packages datasheet - preliminary data figure 1. internal schematic diagram features ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using mdmesh? m2 technology. thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. to-220 to-220fp ipak 1 2 3 1 2 3 tab 3 2 1 tab am15572v1 , tab order codes v ds r ds(on) max i d stf6n65m2 650 v 1.35 ? 4 a STP6N65M2 stu6n65m2 table 1. device summary order codes marking package packaging stf6n65m2 6n65m2 to-220fp tube STP6N65M2 to-220 stu6n65m2 ipak www.st.com
contents stf6n65m2, STP6N65M2, stu6n65m2 2/18 docid026776 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 to-220fp, stf6n65m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 to-220, STP6N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 ipak, stu6n65m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
docid026776 rev 1 3/18 stf6n65m2, STP6N65M2, stu6n65m2 electrical ratings 18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220fp to-220, ipak v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 4 (1) 1. limited by maximum junction temperature. 4a i d drain current (continuous) at t c = 100 c 2.5 (1) 2.5 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 16 (1) 16 a p tot total dissipation at t c = 25 c 20 60 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s; t c =25 c) 2500 v dv/dt (3) 3. i sd 4 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns dv/dt (4) 4. v ds 520v mosfet dv/dt ruggedness 50 t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit to-220fp to-220 ipak r thj-case thermal resistance junction-case max 6.25 2.08 c/w r thj-amb thermal resistance junction-ambient max 62.5 100 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 0.5 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 100 mj
electrical characteristics stf6n65m2, STP6N65M2, stu6n65m2 4/18 docid026776 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 650 v i dss zero gate voltage drain current v gs = 0, v ds = 650 v 1 a v gs = 0, v ds = 650 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2 a 1.2 1.35 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 100 v, f = 1 mhz -226-pf c oss output capacitance - 12.8 - pf c rss reverse transfer capacitance -0.65-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 520 v - 114 - pf r g intrinsic gate resistance f = 1 mhz open drain - 6.5 - ? q g total gate charge v dd = 520 v, i d = 4 a, v gs = 10 v (see figure 8 ) -9.8-nc q gs gate-source charge - 1.7 - nc q gd gate-drain charge - 4 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 325 v, i d = 2 a, r g = 4.7 , v gs = 10 v (see figure 15 and figure 20 ) -19-ns t r rise time - 7 - ns t d(off) turn-off delay time - 6.5 - ns t f fall time - 20 - ns
docid026776 rev 1 5/18 stf6n65m2, STP6N65M2, stu6n65m2 electrical characteristics 18 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 4 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 16 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 4 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 4 a, di/dt = 100 a/s v dd = 60 v (see figure 17 ) - 260 ns q rr reverse recovery charge - 1.2 c i rrm reverse recovery current - 9.2 a t rr reverse recovery time i sd = 4 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 17 ) - 400 ns q rr reverse recovery charge - 1.84 c i rrm reverse recovery current - 9.1 a
electrical characteristics stf6n65m2, STP6N65M2, stu6n65m2 6/18 docid026776 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220fp figure 3. thermal impedance for to-220fp , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v pv ?v 7m ?& 7f ?& 6lqjohsxovh pv *,3*6$ figure 4. safe operating area for to-220 and ipak figure 5. thermal impedance for to-220 and ipak figure 6. output characteristics figure 7. transfer characteristics , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v pv ?v 7m ?& 7f ?& 6lqjohsxovh pv *,3*6$ , ' 9 '6 9 $ 9 9 *6 9 9 9 *,3*6$ , ' 9 *6 9 $ 9 '6 9 *,3*6$
docid026776 rev 1 7/18 stf6n65m2, STP6N65M2, stu6n65m2 electrical characteristics 18 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. normalized gate threshold voltage vs temperature figure 12. normalized on-resistance vs temperature figure 13. normalized v (br)dss vs temperature 9 *6 4 j q& 9 9 '' 9 , ' $ 9 '6 9 '6 9 *,3*6$ 5 '6rq , ' $ 9 *6 9 *,3*6$ & 9 '6 9 s) &lvv &rvv &uvv *,3*6$ 9 *6wk 7 - ?& qrup , ' ?$ *,3*6$ 5 '6rq 7 - ?& qrup 9 *6 9 *,3*6$ 9 %5'66 7 - ?& qrup , ' p$ *,3*6$
electrical characteristics stf6n65m2, STP6N65M2, stu6n65m2 8/18 docid026776 rev 1 figure 14. source-drain diode forward characteristics 9 6' , 6' $ 9 7 - ?& 7 - ?& 7 - ?& *,3*6$
docid026776 rev 1 9/18 stf6n65m2, STP6N65M2, stu6n65m2 test circuits 18 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data stf6n65m2, STP6N65M2, stu6n65m2 10/18 docid026776 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid026776 rev 1 11/18 stf6n65m2, STP6N65M2, stu6n65m2 package mechanical data 18 4.1 to-220fp, stf6n65m2 figure 21. to-220fp drawing 7012510_rev_k_b
package mechanical data stf6n65m2, STP6N65M2, stu6n65m2 12/18 docid026776 rev 1 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 ?3 3.2
docid026776 rev 1 13/18 stf6n65m2, STP6N65M2, stu6n65m2 package mechanical data 18 4.2 to-220, STP6N65M2 figure 22. to-220 type a drawing bw\sh$b5hyb7
package mechanical data stf6n65m2, STP6N65M2, stu6n65m2 14/18 docid026776 rev 1 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q2.65 2.95
docid026776 rev 1 15/18 stf6n65m2, STP6N65M2, stu6n65m2 package mechanical data 18 4.3 ipak, stu6n65m2 figure 23. ipak (to-251) drawing 0068771_k
package mechanical data stf6n65m2, STP6N65M2, stu6n65m2 16/18 docid026776 rev 1 table 11. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
docid026776 rev 1 17/18 stf6n65m2, STP6N65M2, stu6n65m2 revision history 18 5 revision history table 12. document revision history date revision changes 04-aug-2014 1 first release.
stf6n65m2, STP6N65M2, stu6n65m2 18/18 docid026776 rev 1 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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